Photocapacitance Measurement on Intentionally Undoped n-Type Ga_<0.9>Al_<0.1>As Grown by Stoichiometry Control Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-04-15
著者
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Nishizawa Jun-ichi
Semiconductor Research Institute, Semiconductor Research Foundation
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Suto K
Semiconductor Research Institute Semiconductor Research Foundation
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Suto Ken
Telecommunications Advncement Organization Of Japan Sendai Research Center:graduate School Of Materi
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Oyama Y
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Nishizawa J
Telecommunications Advancement Organization Of Japan Sendai Jpn
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Nishizawa Jun-ichi
Telecommunications Advncement Organization Of Japan Sendai Research Center
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NISHIZAWA Jun-ichi
Tohoku University
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MOTOZAWA Mitsutake
Faculty of Engineering, Tohoku University
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OYAMA Yutaka
Semiconductor Research Institute, Semiconductor Research Foundation
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DEZAKI Kazushi
Semiconductor Research Institute, Semiconductor Research Foundation
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FUJISHIRO Hiroyuki
Semiconductor Research Institute, Semiconductor Research Foundation
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SUTO Ken
Faculty of Engineering, Tohoku University
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Dezaki Kazushi
Semiconductor Research Institute Semiconductor Research Foundation
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Saito Kyosuke
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Motozawa Mitsutake
Faculty Of Engineering Tohoku University
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Fujishiro Hiroyuki
Semiconductor Research Institute Semiconductor Research Foundation:(present Address)faculty Of Engin
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