Deep Level in InP Crystal Grown by the Horizontal Bridgman Method under Controlled Phosphorus Vapor Pressure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-07-15
著者
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Nishizawa Jun-ichi
Semiconductor Research Institute, Semiconductor Research Foundation
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Suto K
Semiconductor Research Institute Semiconductor Research Foundation
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Suto Ken
Telecommunications Advncement Organization Of Japan Sendai Research Center:graduate School Of Materi
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Oyama Y
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Nishizawa J
Telecommunications Advancement Organization Of Japan Sendai Jpn
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Nishizawa Jun-ichi
Telecommunications Advncement Organization Of Japan Sendai Research Center
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OYAMA Yutaka
Telecommunications Advancement Organization of Japan, SENDAI Research Center
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Shimizu A
Department Of Electrical And Electronic Engineering Faculty Of Engineering University Of Yamanashi
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SHIMIZU Atsushi
Telecommunications Advancement Organization of Japan, Sendai Research Center
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Saito Kyosuke
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Shimizu Atsushi
Telecommunications Advancement Organization Of Japan Sendai Research Center
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