Digital Etching of (001) InP Substrate by Intermittent Injection of Tertiarybutylphosphine in Ultrahigh Vacuum
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-12-15
著者
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Nishizawa Jun-ichi
Semiconductor Research Institute, Semiconductor Research Foundation
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大塚 信之
松下電器半導体センター
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Suto K
Semiconductor Research Institute Semiconductor Research Foundation
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Suto Ken
Telecommunications Advncement Organization Of Japan Sendai Research Center:graduate School Of Materi
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Oyama Y
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Nishizawa J
Telecommunications Advancement Organization Of Japan Sendai Jpn
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Nishizawa Jun-ichi
Telecommunications Advncement Organization Of Japan Sendai Research Center
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Kikuchi H
Telecommunications Advancement Organization Of Japan Sendai Research Center:semiconductor Research I
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OTSUKA Nobuyuki
Telecommunications Advancement Organization of Japan, SENDAI Research Center
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OYAMA Yutaka
Telecommunications Advancement Organization of Japan, SENDAI Research Center
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KIKUCHI Hideyuki
Semiconductor Research Institute of Semiconductor Research Foundation
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Kikuchi Hideyuki
Telecommunications Advancement Organization Of Japan Sendai Research Center:semiconductor Research I
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Nishizawa Jun-ichi
Semiconductor Research Foundation Semiconductor Research Institute
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Otsuka Nobuyuki
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Otsuka Nobuyuki
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Otsuka Nobuyuki
Telecommunications Advancement Organization Of Japan Sendai Research Center
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Saito Kyosuke
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Kikuchi Hiroki
Institute Of Industrial Science University Of Tokyo
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