Room Temperature 339 nm Emission from Al_<0.13>Ga_<0.87>N/Al_<0.10>Ga_<0.90>N Double Heterostructure Light-Emitting Diode on Sapphire Substrate
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-05-15
著者
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大塚 信之
松下電器半導体センター
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Kume Masahiro
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Ban Yuzaburoh
Advanced Technology Research Laboratories Matsushita Electric Ind.co. Ltd.
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Tsujimura Ayumu
Advanced Technology Research Laboratories Matsushita Electric Ind.co. Ltd.
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Hasegawa Y
Asahi Technical Lab. Co. Shizuoka Jpn
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HASEGAWA Yoshiaki
Advanced Technology Research Laboratories, Matsushita Electric Ind.Co., Ltd.
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OTSUKA Nobuyuki
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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SUGAHARA Gaku
Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd.
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Sugahara G
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Sugahara Gaku
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Otsuka Nobuyuki
Semiconductor Research Center Matsushita Electric Industrial Co. Ltd.
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Otsuka Nobuyuki
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
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Otsuka Nobuyuki
Telecommunications Advancement Organization Of Japan Sendai Research Center
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