Dynamic Observation of Brain-Like Learning in a Ferroelectric Synapse Device
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概要
- 論文の詳細を見る
A brain-like learning function was implemented in an electronic synapse device using a ferroelectric-gate field effect transistor (FeFET). The FeFET was a bottom-gate type FET with a ZnO channel and a ferroelectric Pb(Zr,Ti)O<inf>3</inf>(PZT) gate insulator. The synaptic weight, which is represented by the channel conductance of the FeFET, is updated by applying a gate voltage through a change in the ferroelectric polarization in the PZT. A learning function based on the symmetric spike-timing dependent synaptic plasticity was implemented in the synapse device using the multilevel weight update by applying a pulse gate voltage. The dynamic weighting and learning behavior in the synapse device was observed as a change in the membrane potential in a spiking neuron circuit.
- 2013-04-25
著者
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Tsujimura Ayumu
Advanced Technology Research Laboratories Matsushita Electric Ind.co. Ltd.
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Fujii Eiji
Advanced Technology Research Laboratories Panasonic Corporation
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Ueda Michihito
Advanced Technology Research Laboratories Matsushita Electric (panasonic) Industrial Co. Ltd.
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Kaneko Yukihiro
Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan
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Fujii Eiji
Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan
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Nishitani Yu
Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan
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Tsujimura Ayumu
Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan
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