Direct Heteroepitaxial Growth of ZnO over GaN Crystal in Aqueous Solution

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概要

• 論文の詳細を見る

• We report on the structural and electrical properties of ZnO films grown on surface-treated GaN/Al<inf>2</inf>O<inf>3</inf>substrates by chemical bath deposition. X-ray diffraction analysis indicated that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. The ZnO film exhibited n-type conduction with a carrier concentration of 6.9 \times 10^{18} cm^-3, an electron mobility of 41 cm²/(V\cdots), and a resistivity of 2.2 \times 10^{-2} \Omega\cdotcm. A low specific contact resistivity of 4.3 \times 10^{-3} \Omega\cdotcm²was obtained at the ZnO/n-GaN interface. Additionally, the ZnO film exhibited high transparency in the visible and infrared region.

• 2013-04-25

著者

• Tsujimura Ayumu

  Advanced Technology Research Laboratories Matsushita Electric Ind.co. Ltd.

• Fujii Eiji

  Advanced Technology Research Laboratories Panasonic Corporation

• Ito Akihiro

  Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan

• Nagao Nobuaki

  Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan

• Hamada Takahiro

  Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan

• Suzuki Nobuyasu

  Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan

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