Improvement of Crystalline Quality in GaN Films by Air-Bridged Lateral Epitaxial Growth

概要

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Air-bridged lateral epitaxial growth(ABLEG), a new technique of lateral growth of GaN films, has been developed using low-pressure metalorganic vapor phase epitaxy. A previously grown 1-μm-thick GaN film is grooved along the<1100>_<GaN> direction, and the bottoms of the trenches and the sidewalls are covered with a silicon nitride mask. A free-standing GaN material is regrown from the exposed(0001)surface of the ridged GaN seed structure. Cross-sectional transmissin electron microscopy analysis reveals that the dislocations originating from the underlying seed GaN extend straight in the<0001>direction and dislocations do not propagate into the wing region. The wing region also exhibits a smooth surface and the root mean square roughness is found to be 0.088nm by atomic force microscopy measurement of the(0001)face of the wing region.
2000-05-15