Preparation of Pb(Mg1/3Nb2/3)O3–Pb(Zr,Ti)O3 Thin Films by RF-Magnetron Sputtering and Their Electrical and Piezoelectric Properties

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The 0.875Pb(Mg1/3Nb2/3)O3–0.125Pb(Zr,Ti)O3 [0.125PMN–0.875PZT (50/50)] thin films, which have an extremely large piezoelectric coefficient $d_{31}$ of $-225$ pm/V, have been successfully obtained on (100) Si substrates by RF-magnetron sputtering. These PMN–PZT thin films have a high (001) orientation. The dependences of the electrical and piezoelectric properties of these films on substrate heating temperature were evaluated. The $\varepsilon_{\text{r}}$ of PMN–PZT films prepared in the substrate heating temperature range of 540 to 620 °C was almost constant at 1400. The $d_{31}$ was measured from the tip deflection of the cantilever beams. Even without a poling treatment, the $d_{31}$of the PMN–PZT thin films at 580 °C was $-225$ pm/V. This $d_{31}$ was 50% larger than that of PZT thin films deposited under the same conditions. These PMN–PZT thin films are attractive materials for micro actuator applications, especially for ink jet head actuators.
2009-01-25