Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors
スポンサーリンク
概要
- 論文の詳細を見る
Power concentration due to tremendous chip size reduction requires superior thermal conductivity. We first demonstrate the reduction in junction temperatures in low-pressure direct liquid cooling (LP-DLC) of GaN power devices for high-power and high-voltage switching applications. In the LP-DLC structure, junction temperature reductions of up to 55 K or 100% higher power levels were demonstrated by introducing a working fluid to a package. The thermal resistance has decreased to 28% in the LP-DLC structure with a radiator.
- 2011-04-25
著者
-
Otsuka Nobuyuki
Advanced Technology Research Laboratories Matsushita Electric Industrial Co. Ltd.
-
Uemoto Yasuhiro
Discrete Devices Development Center, Semiconductor Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
-
Yanagihara Manabu
Discrete Devices Development Center, Semiconductor Company, Panasonic Corporation, Nagaokakyo, Kyoto 617-8520, Japan
-
Nagai Shuichi
Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan
-
Ueda Daisuke
Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan
-
Otsuka Nobuyuki
Advanced Technology Research Laboratories, Panasonic Corporation, Seika, Kyoto 619-0237, Japan
関連論文
- 28a-ZB-6 InGaAs/InP多層膜界面の高分解能電子顕微鏡像
- 30a-L-2 InGaAs/InP多層結晶のHRTEM観察
- 広帯域FM変調型光映像伝送方式の検討(1)FM変調用DFB-LDの雑音特性の検討
- 低チャープ1.55μm歪MQW-DFBレーザの低変調歪特性
- SCM映像伝送用MQW-DFBレーザにおける広帯域低歪化の検討
- Digital Etching of InP by Intermittent Injection of Phosphorous Precursors in Ultra-high Vacuum
- Self-Limiting Growth of Specular InP Layer by Alternate Injection of Triethylindium and Tertiarybutylphosphine in Ultrahigh Vacuum
- Digital Etching of (001) InP Substrate by Intermittent Injection of Tertiarybutylphosphine in Ultrahigh Vacuum
- Digital Etching of InP Using Tris-Dimethylaminophosphorus in Ultra-High Vacuum
- InGaAsP 歪量子井戸におけるPL発光特性の成長温度依存性
- 移動体通信用低3次変調歪DFBレーザ
- 1.3μm歪MQW-DFBレーザモジュールの高出力・多チャンネル化の検討
- 動的軸方向ホールバーニングを考慮した相互変調歪特性の解析
- 広帯域SCM伝送用低変調歪・低チャープ特性1.55μmSL-MQW-DFBレーザ
- 広帯域SCM伝送用歪MQW-DFBレ-ザモジュ-ル (特集 マルチメディアを支える半導体) -- (デバイス)
- Room Temperature 339 nm Emission from Al_Ga_N/Al_Ga_N Double Heterostructure Light-Emitting Diode on Sapphire Substrate
- New Structure of 1.3 μm Strained-Layer Multi-Quantum Well Complex-Coupled Distributed Feedback Lasers
- Novel Structure of 1.3μm Strained-Layer MQW Complex-Coupled DFB Lasers
- B-9-6 フレーム直接接続型両面放熱面実装インバータパッケージ(B-9.電子通信エネルギー技術,一般セッション)
- Low-Pressure Direct-Liquid-Cooling Technology for GaN Power Transistors
- C-10-5 統合設計プラットフォームにおけるGaNデバイスの動的挙動モデル(C-10.電子デバイス,一般セッション)
- マイクロ波駆動技術を用いた絶縁型ゲート駆動回路(先端テクノロジ,低電圧/低消費電力技術,新デバイス・回路とその応用)
- マイクロ波駆動技術を用いた絶縁型ゲート駆動回路(先端テクノロジ,低電圧/低消費電力技術,新デバイス・回路とその応用)