Lattice Parameter Deviation of InP Single Crystals Grown by the Horizontal Bridgman Method under Controlled Phosphorus Vapor Pressure
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概要
- 論文の詳細を見る
- 2001-04-01
著者
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Oyama Y
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Nishizawa Jun-ichi
Telecommunications Advncement Organization Of Japan Sendai Research Center
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Nishizawa Jun-ichi
Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute
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Shimizu A
Department Of Electrical And Electronic Engineering Faculty Of Engineering University Of Yamanashi
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SHIMIZU Atsushi
Sendai Research Center, Telecommunications Advancement Organization of Japan
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OYAMA Yutaka
Sendai Research Center, Telecommunications Advancement Organization of Japan
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SUTO Ken
Sendai Research Center, Telecommunications Advancement Organization of Japan
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- Lattice Parameter Deviation of InP Single Crystals Grown by the Horizontal Bridgman Method under Controlled Phosphorus Vapor Pressure