Nishizawa Jun-ichi | Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute
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概要
- 同名の論文著者
- Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute の論文著者
関連著者
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Nishizawa Jun-ichi
Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute
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SHIMIZU Atsushi
Sendai Research Center, Telecommunications Advancement Organization of Japan
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OYAMA Yutaka
Sendai Research Center, Telecommunications Advancement Organization of Japan
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SUTO Ken
Sendai Research Center, Telecommunications Advancement Organization of Japan
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Kanamoto Kyozo
Sendai Research Center Telecommunications Advancement Organization:depanment Of Materials Science Gr
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Oyama Y
Department Of Materials Science Graduate School Of Engineering Tohoku University
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Nishizawa Jun-ichi
Telecommunications Advncement Organization Of Japan Sendai Research Center
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Murai Akihiko
Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute
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Shimizu A
Department Of Electrical And Electronic Engineering Faculty Of Engineering University Of Yamanashi
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YOSHIDA Takashi
Sendai Research Center, Telecommunications Advancement Organization
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OIZUMI Toru
Sendai Research Center, Telecommunications Advancement Organization
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KURABAYASHI Toru
Sendai Research Center, Telecommunications Advancement Organization
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Oizumi Toru
Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute
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Kurabayashi Toru
Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute
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Yoshida Takashi
Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute
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Suto Ken
Sendai Research Center, Telecommunications Advancement Organization of Japan, 519 Aoba Aramaki, Aoba-ku, Sendai 980-0845, Japan
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Nishizawa Jun-ichi
Sendai Research Center, Telecommunications Advancement Organization of Japan, 519 Aoba Aramaki, Aoba-ku, Sendai 980-0845, Japan
著作論文
- Lattice Parameter Deviation of InP Single Crystals Grown by the Horizontal Bridgman Method under Controlled Phosphorus Vapor Pressure
- Low-Temperature Formation of Thin-Gate SiO_2 Films by the Ultrahigh-Vacuum Chemical Vapor Deposition with Reduced Subcutaneous Oxidation Using Remote-Plasma-Activated Oxygen and Si_2H_6 : Surfaces, Interfaces, and Films
- Lattice Parameter Deviation of InP Single Crystals Grown by the Horizontal Bridgman Method under Controlled Phosphorus Vapor Pressure