Lattice Parameter Deviation of InP Single Crystals Grown by the Horizontal Bridgman Method under Controlled Phosphorus Vapor Pressure

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概要

• 論文の詳細を見る

• InP crystals were grown by the horizontal Bridgman method under controlled ambient phosphorus vapor pressure. The lattice parameter was measured by X-ray diffraction analysis. The lattice parameter of the InP crystals increased with increasing phosphorus vapor pressure. The relationship between the lattice parameter and composition indicates that the In-rich composition is attributed to the P-vacancies. This corresponds to the photoluminescence spectra of P-vacancy-related emission.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2001-04-15

著者

• Nishizawa Jun-ichi

  Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute

• SHIMIZU Atsushi

  Sendai Research Center, Telecommunications Advancement Organization of Japan

• OYAMA Yutaka

  Sendai Research Center, Telecommunications Advancement Organization of Japan

• SUTO Ken

  Sendai Research Center, Telecommunications Advancement Organization of Japan

• Suto Ken

  Sendai Research Center, Telecommunications Advancement Organization of Japan, 519 Aoba Aramaki, Aoba-ku, Sendai 980-0845, Japan

• Nishizawa Jun-ichi

  Sendai Research Center, Telecommunications Advancement Organization of Japan, 519 Aoba Aramaki, Aoba-ku, Sendai 980-0845, Japan

関連論文

• Lattice Parameter Deviation of InP Single Crystals Grown by the Horizontal Bridgman Method under Controlled Phosphorus Vapor Pressure
• Low-Temperature Formation of Thin-Gate SiO_2 Films by the Ultrahigh-Vacuum Chemical Vapor Deposition with Reduced Subcutaneous Oxidation Using Remote-Plasma-Activated Oxygen and Si_2H_6 : Surfaces, Interfaces, and Films
• Lattice Parameter Deviation of InP Single Crystals Grown by the Horizontal Bridgman Method under Controlled Phosphorus Vapor Pressure

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