Low-Temperature Formation of Thin-Gate SiO_2 Films by the Ultrahigh-Vacuum Chemical Vapor Deposition with Reduced Subcutaneous Oxidation Using Remote-Plasma-Activated Oxygen and Si_2H_6 : Surfaces, Interfaces, and Films

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We have investigated the growth condition dependence on the properties of SiO_2 films by remote-plasma-enhanced chemical vapor deposition (RPECVD) in an ultrahigh vacuum system with remote-plasma-activated oxygen and Si_2H_6. During the RPECVD, subcutaneous oxidation of the Si substrate was not negligible, which degraded the controllability of the film thickness and the electrical properties. The amount of the active oxygen species that dominates the reactions of subcutaneous oxidation was considered to he significantly reduced with increasing O_2 flow rate, while that of "pure" CVD remained unchanged. As a result, precise control of the RPECVD SiO_2 thickness with reduced subcutaneous oxidation has been achieved by setting the O_2 flow rate to the maximum and by using higher Si_2H_6 flow rates. The characteristics of the SiO_2 films obtained using optimized RPECVD conditions at temperatures lower than 600℃ without a postannealing process have been demonstrated to be comparable to those of thermally grown films.
社団法人応用物理学会の論文
2001-10-15