Yoshida Takashi | Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute

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概要

関連著者

Kanamoto Kyozo
Sendai Research Center Telecommunications Advancement Organization:depanment Of Materials Science Gr
Nishizawa Jun-ichi
Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute
Murai Akihiko
Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute
YOSHIDA Takashi
Sendai Research Center, Telecommunications Advancement Organization
OIZUMI Toru
Sendai Research Center, Telecommunications Advancement Organization
KURABAYASHI Toru
Sendai Research Center, Telecommunications Advancement Organization
Oizumi Toru
Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute
Kurabayashi Toru
Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute
Yoshida Takashi
Sendai Research Center Telecommunications Advancement Organization:semiconductor Research Institute

著作論文

Low-Temperature Formation of Thin-Gate SiO_2 Films by the Ultrahigh-Vacuum Chemical Vapor Deposition with Reduced Subcutaneous Oxidation Using Remote-Plasma-Activated Oxygen and Si_2H_6 : Surfaces, Interfaces, and Films

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