Nucleation and Surface Roughness in Self-Limiting Monolayer Epitaxy of GaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-10-15
著者
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Nishizawa Jun-ichi
Semiconductor Research Institute, Semiconductor Research Foundation
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ESASHI Masayoshi
Tohoku University Graduate School of Engineering
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Nishizawa Jun-ichi
Semiconductor Research Institute:telecommunications Advancement Organization Of Japan Sendai Researc
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Esashi Masayoshi
Tohoku University
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Nishizawa Jun-ichi
Semiconductor Research Foundation Semiconductor Research Institute
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Esashi Masayoshi
Tohoku University New Industry Creation Hatchery Center
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Kono Kazushi
Tohoku University Faculty Of Engineering Mechatronics And Precision Engineering
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KURABAYASHI Toru
Semiconductor Research Institute
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Kurabayashi Toru
Semiconductor Research Institute:telecommunications Advancement Organization Of Japan Sendai Researc
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ESASHI Masayoshi
Tohoku University, New Industry Creation Hatchery Center
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