Diffusion Control of Dopant from Heavily Se Doped n Type GaAs Layers Grown by Molecular Layer Epitaxy

概要

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Properties of GaAs grown by molecular layer epitaxy are strongly influenced by surface stoichiometry during growth. In molecular layer epitaxy, Se is introduced for the heavily doped n^<++> layers for device applications. In such layers, Se exists as an interstitial atom and behaves as a diffusion source. In the growth process, the diffusion of doped Se into GaAs is affected by the supply pressure of AsH_3; a higher amount of AsH_3 supplied during the growth of the undoped layer in an n^<++>-i structure reduces the diffusion of Se. A lower amount of AsH_3 supplied during the growth of the n^<++> layer reduces the diffusion of Se from the n^<++> layer to the i layer. The stoichiometry in i and n^<++> layers affects the diffusion of interstitial Se in different manners.
社団法人応用物理学会の論文
1999-11-15