Tunneling Spectroscopy in MS and MIS Tunnel Junctions of Degenerate n-Type Semiconductor
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概要
- 論文の詳細を見る
Tunneling densities of states in degenerate n-type Ge and n-type Si are obtained by using Schottky barrier tunnel junctions by a method similar to that of Conley et al., but with a higher order approximation. It is shown directly by tunneling that tailings of (111) and (000) bandgaps occur in the same manner. Zero bias anomaly of V-type conductance which has often been found in tunnel junctions of III-V compounds is also observed in some MIS tunnel junctions made on degenerate n-type Ge and n-type Si, depending on the thickness of the insulating layer. It is difficult to explain this anomaly in terms of TA phonon excitation by tunneling electrons, as the explanation for this anomaly.
- 社団法人応用物理学会の論文
- 1975-10-05
著者
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Nishizawa Jun-ichi
Research Institute Of Electrical Cammunication Tohoku University
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KIMURA Mitsuteru
Research Institute of Electrical Communication, Tohoku University
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Kimura Mitsuteru
Research Institute Of Electrical Communication Tohoku University:faculty Of Technology Tohoku Gakuin
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