Solution Growth of ZnTe Crystals by a Temperature Difference Method under Controlled Vapor Pressure

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概要

• 論文の詳細を見る

• Vapor-pressure dependence of the optical and electrical properties of a ZnTe crystal grown by a temperature difference method under controlled Zn pressure was investigated. The deep-level emission in the cathodoluminescence (CL) spectrum was reduced by the application of a certain Zn pressure, and the resistivity of crystal reached a minimum at almost the same Zn pressure. The CL spectrum showed only a single peak at a near band edge without any deep-level emission in the crystal grown at an optimum Zn pressure.

• 社団法人応用物理学会の論文
• 1988-08-20

著者

• Okuno Y

  Research & Development Laboratory Stanley Electric Co. Ltd.

• Okuno Yasuo

  Research Institute Of Electrical Communication Tohoku University:semiconductor Research Institute

• Maruyama Tsuyoshi

  Research & Development Laboratory Stanley Electric Co. Ltd.

• KANBA Takahiro

  Research & Development Laboratory, Stanley Electric Co., Ltd.,

• Kanba Takahiro

  Research & Development Laboratory Stanley Electric Co. Ltd.

• OKUNO Yasuo

  Research & Development Laboratory, Stanley Electric Co., Ltd.,

関連論文

• Luminescence from Diffused In_Ga_xP p_n Junctions
• Bright Yellow Luminescence from In_Ga_xP p-n Junctions
• Growth of In_Ga_xP Crystals from Solution
• Solution Growth of ZnTe Crystals by a Temperature Difference Method under Controlled Vapor Pressure

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