Structure of Iron Silicide film on Si(111) Grown by Solid-Phase Epitaxy and Reactive Deposition Epitaxy

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概要

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• The method dependence of iron silicide grown on Si(111) was studied by scanning tunneling microscopy. The iron silicide films grown by two different methods (solid-phase epitaxy and reactive deposition epitaxy) were compared at a small-film-thickness region below 1 nm. The surface morphology strongly depends on the growth method, which suggests that the strain in the interface region is affected by the growth method.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-03-30

著者

• Kawauchi Taizou

  Institute Of Industrial Science University Of Tokyo

• Okano Tatsuo

  Institute Of Industrial Science The University Of Tokyo

• Matsumoto Masuaki

  Institute Of Industrial Science University Of Tokyo

• Fukutani Katsuyuki

  Institute For Industrial Science The University Of Tokyo

• Fukutani Katsuyuki

  Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

• Sugie Kaoru

  Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

• Matsumoto Masuaki

  Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

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