Fan J‐f | Riken The Institute Of Physical And Chemical Research
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概要
関連著者
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Fan J‐f
Riken The Institute Of Physical And Chemical Research
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Fan Jia-fa
Institute Of Materials Science University Of Tsukuba:(present Address)insitute Of Physical And Chemi
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Oigawa Haruhiro
Institute of Materials Science, University of Tsukuba
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Nannichi Yasuo
Institute of Materials Science, University of Tsukuba
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Nannichi Yasuo
University Of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science Institute Of Applied Physics University Of Tsukuba
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Nannichi Yasuo
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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Fan Jia-fa
Institute Of Materials Science University Of Tsukuba
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Oigawa H
Institute Of Applied Physics 21th Century Coe Nano Project University Of Tsukuba
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Oigawa Haruhiro
Institute Of Materials Science University Of Tsukuba
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Oigawa Haruhiro
Institute of Applied Physics, 21th Century COE, NANO project, University of Tsukuba, Tsukuba 305-8573, Japan
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Sugioka Koji
Laser Technology Lab., RIKEN- Institute of Physical and Chemical Research
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Tanaka S
Toshiba Corp. Kawasaki Jpn
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TOYODA Koichi
RIKEN, The Institute of physical and Chemical Research
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Tanaka Shin-ichiro
Institute For Molecular Science
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TANAKA Shunichi
Department of Applied Physics, Science University of Tokyo
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SUGIOKA Koji
Riken, The Institute of Physical and Chemical Research
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FAN Jia-Fa
Riken, The Institute of Physical and Chemical Research
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KITA Kazuhiro
Department of Applied Physics, Science University of Tokyo
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Tanaka Shun-ichi
Department of Applied Physics, Faculty of Engineering, The University of Tokyo
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Sugioka Koji
Riken The Institute Of Physical And Chemical Research
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Tanaka S
Atr Media Integration And Communications Research Laboratories
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Kita Kazuhiro
Department Of Applied Physics Science University Of Tokyo
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Kita Kazuhiro
Department Of Applied Biological Science Faculty Of Science And Technology Science University Of Tok
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Toyoda Koichi
Riken The Institute Of Physical And Chemical Research
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Tanaka Shunichi
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Tanaka Seiichi
ATR Media Integration and Communications Research Laboratories
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ANDO KOJI
Department of Surgery and Science, Graduate School of Medical Sciences, Kyushu University
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KOMA Atsushi
Department of Chemistry, The University of Tokyo
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SAIKI Koichiro
Department of Chemistry, The University of Tokyo
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Kawabe Mitsuo
Institute Of Materials Science University Of Tsukuba
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Kawabe Mitsuo
Institute Of Applied Physics University Of Tsukuba
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Toyoda Koichi
The Institute of Physical and Chemical Research Wako
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Oshima M
Department Of Applied Chemistry The University Of Tokyo
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Oshima M
Univ. Tokyo Tokyo
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Oshima M
Department Of Engineering The University Of Tokyo
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Oshima Masaharu
Ntt Applied Electronics Laboratories
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Saiki Koichiro
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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SUGAHARA Hirohiko
NTT Applied Electronics Laboratories
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Fan Jia-Fa
The Institute of Physical and Chemical Research (RIKEN)
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Sugioka Koji
The Institute of Physical and Chemical Research (RIKEN)
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KOMA Atsushi
Faculty of Chemistry, University of Tokyo
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Koma Atsushi
Department Of Applied Physics University Of Tokyo
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Sugahara H
Univ. Tsukuba Ibaraki Jpn
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Ando Koji
Department Of Applied Chemistry Muroran Institute Of Technology
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Toyoda Koichi
The Institute Of Physical And Chemical Research
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Ando Koji
Department Of Chemistry University Of Tokyo
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Ando Koji
Department Of Applied Chemistry Faculty Of Science And Technology Keio University
著作論文
- Selective Etching of AI_2O_3 on GaAs using Excimer Lasers : Etching
- Selective Etching of Al_2O_3 on GaAs using Excimer Lasers
- Low-Temperature Growth of Thin Films of Al_2O_3 by Sequential Surface Chemical Reaction of trimelhylaluminum and H_2O_2
- Universal Passivation Effect of (NH_4)_2S_x Treatment on the Surface of III-V Compound Semiconductors
- Epitaxial Growth of Al on (NH_4)_2S_x-Treated GaAs
- AES Observation on the Photochemically Washed Surface of GaAs
- Studies on an (NH_4)_2S_x-Treated GaAs Surface Using AES, LEELS and RHEED
- A Model to Explain the Effective Passivation of the GaAs Surface by (NH_4)_2S_x Treatment : Semiconductors and Semiconductor Devices
- Metal-Dependent Schottky Barrier Height with the (NH_4)_2S_x-Treated GaAs : Semiconductors and Semiconductor Devices
- The Effect of (NH_4)_2S Treatment on the Interface Characteristics of GaAs MIS Structures : Semiconductors and Semiconductors Devices