A Simple Method to Determine the Capture Cross Section of Deep Levels in GaAs by Thermally Stimulated Current
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概要
- 論文の詳細を見る
A new and simple method to determine the capture cross section of deep levels by Thermally Stimulated Current measurement is demonstrated. The cross section is obtained by analysis of the variation in the peak height with the initialization dose. The examplar values of the cross section at 4 K estimated by this method for two levels in semiinsulating GaAs were 2×10^<-15>cm^2 and 1×10^<-15>cm^2.
- 社団法人応用物理学会の論文
- 1987-04-20
著者
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Nannichi Yasuo
Institute Of Materials Science And Center For Tara Tsukuba Advanced Research Alliance University Of
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TOMOZANE Mamoru
Institute of Materials Science, University of Tsukuba
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Tomozane Mamoru
Institute Of Materials Science University Of Tsukuba
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