Amorphization Processes in Ion Implanted Si : Temperature Dependence
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-12-30
著者
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Fons P
Optoelectronic Materials And Devices Group Photonics Research Institute National Institute Of Advanc
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Fons P
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Fons Paul
Institute Of Applied Physics University Of Tsukuba
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MOTOOKA Teruaki
Institute of Applied Physics, University of Tsukuba
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TOKUYAMA Takashi
Institute of Applied Physics, University of Tsukuba
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MOTOOKA Teruaki
University of Tsukuba
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KOBAYASHI Fumihiko
University of Tsukuba
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FONS Paul
University of Tsukuba
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TOKUYAMA Takashi
University of Tsukuba
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SUZUKI Tadashi
Device Development Center, Hitachi, Lid.
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NATSUAKI Nobuyoshi
Device Development Center, Hitachi, Lid.
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KOBAYASHI Fumihiko
Institute of Applied Physics, University of Tsukuba
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Motooka T
Kyushu Univ. Fukuoka Jpn
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Tokuyama T
Institute Of Applied Physics University Of Tsukuba
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Natsuaki Nobuyoshi
Device Development Center Hitachi Lid.
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Kobayashi F
Electrotechnical Lab. Ibaraki Jpn
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Suzuki Tadashi
Device Development Center Hitachi Lid.
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