Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process

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概要

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• With the aim of achieving heterogeneous integration of compound semiconductors with silicon technology, the fabrication of an InP/InGaAs transferred-substrate HBT (TS-HBT) on a Si substrate is reported. A current gain of 70 and a maximum current density of 12.3mA/µm2 were confirmed in a TS-HBT with a 340-nm-wide emitter. From microwave characteristics of the TS-HBT obtained after de-embedding, a cutoff frequency (fT) of 510GHz and a 26% reduction of the base-collector capacitance were estimated. However, the observed fT was too high for an HBT with a 150-nm-thick collector. This discrepancy can be explained by the error in de-embedding, because an open pad is observed to have large capacitance and strong frequency dependence due to the conductivity of the Si substrate.

• The Institute of Electronics, Information and Communication Engineersの論文
• 2012-08-01

著者

• MIYAMOTO Yasuyuki

  the Department of Physical Electronics, Tokyo Institute of Technology

• SAGAI Takeshi

  the Department of Physical Electronics, Tokyo Institute of Technology

• YAMAGUCHI Yutaro

  the Department of Physical Electronics, Tokyo Institute of Technology

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• Current-Voltage Characteristics of Triple-Barrier Resonant Tunnnel Diodes Including Coherent and Incoherent Tunneling Processes (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications
• Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process

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