InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications

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概要

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• An InAs-channel high-electron-mobility transistor (HEMT) with an 80 nm gate length for ultralow-power low-noise amplifier (LNA) applications has been fabricated and characterized on a 2-in. InP substrate. Small-signal $S$-parameter measurements performed on the InAs-channel HEMT at a low drain-source voltage of 0.2 V exhibited an excellent $ f_{\text{T}}$ of 120 GHz and an $ f_{\text{max}}$ of 157 GHz. At an extremely low level of dc power consumption of 1.2 mW, the device demonstrated an associated gain of 9.7 dB with a noise figure of less than 0.8 dB at 12 GHz. Such a device also demonstrated a higher associated gain and a lower noise figure than other InGaAs-channel HEMTs at extremely low dc power consumption. These results indicate the outstanding potential of InAs-channel HEMT technology for ultralow-power space-based radar, mobile millimeter-wave communications and handheld imager applications.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• MIYAMOTO Yasuyuki

  the Department of Physical Electronics, Tokyo Institute of Technology

• Chang Edward

  The Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Chang Chia-Yuan

  The Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Hsu Heng-Tung

  The Department of Communication Engineering, Yuan Ze University, Chungli 32003, Taiwan, R.O.C.

• Miyamoto Yasuyuki

  The Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku, Tokyo 152-8552, Japan

関連論文

• InP DHBT with 0.5μm Wide Emitter alongDirection toward BM-HBT with Narrow Emitter(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• Current-Voltage Characteristics of Triple-Barrier Resonant Tunnnel Diodes Including Coherent and Incoherent Tunneling Processes (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications
• Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process

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