Data Processing in High Resolution X-Ray Spectroscopy : REFINED SPECTROSCOPY, X-RAY OPTICS AND INSTRUMENTATION
スポンサーリンク
概要
著者
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KAMADA Hitoshi
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo
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GOHSHI Yohichi
Department of Applied Chemistry, University of Tokyo
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Kamada Hitoshi
Department Of Industrial Chemistry Faculty Of Engineering University Of Tokyo
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Kamada Hitoshi
Department Of Chemical Industry Faculty Of Engineering University Of Tokyo
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Gohshi Yohichi
Department Of Applied Chemistry School Of Engineering The University Of Tokyo
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AKITA Masayuki
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo
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Akita Masayuki
Department Of Industrial Chemistry Faculty Of Engineering University Of Tokyo
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Gohshi Yohichi
Department Of Applied Chemistry Faculty Of Engineering The University Of Tokyo
関連論文
- Structural and Chemical State Analysis of the Heat-Treated Au/GaSb(110) Interface by Means of Angle-Resolved X-Ray Photoelectron Spectroscopy (ARXPS)
- X-Ray Fluorescence Holography of SrTiO_3 Compared with X-Ray Photoelectron Holography
- Analysis of Contamination Layer of InP During LPE Process by Synchrotron Radiation-Excited X-Ray Fluorescence : Surfaces, Interfaces and Films
- Chemical State Mapping by X-Ray Fluorescence Using Absorption Edge Shifts : Techniques, Instrumentations and Measurement
- Characterization of Co-O Thin Films by X-Ray Fluorescence Using Chemical Shifts of Absorption Edges
- A Scanning X-Ray Fluorescence Microprobe with Synchrotron Radiation
- Deconvolution of Iron Kβ_ Spectra Fitted with Spline Functions
- Basic Analysis of A Pulsed Photoacoustic Microscope : Photoacoustic Spectroscopy and Ultrasonic Microscopy
- Ultrasonic Generation by Laser-induced Grating and its Application to Chemical Measurements : Physical Acoustics
- Nondestructive Evaluation of Materials by Photoacoustic Microscope and Photothermal Beam Deflection. : Photoacoustic Spectroscopy
- Photoacoustic Microscopic (PAM) Images of Some GaAs Wafers : Photoacoustic Spectroscopy
- Chemical State Analysis of Silicon-Oxygen Compounds : CHEMICAL APPLICATIONS
- Determination of the Mass Resolution and the Depth Resolution of Time of Flight Elastic Recoil Detection Analysis Using Heavy Ion Beams
- lmproverment in the Detection Limits of Elastic Recoil Detection Analysis (ERDA)Using a Time-of-Flight Detection
- Data Processing in High Resolution X-Ray Spectroscopy : REFINED SPECTROSCOPY, X-RAY OPTICS AND INSTRUMENTATION
- Inelastic Mean Free Path of Photoelectrons in Ag Determined by Total Reflection X-Ray Photoelectron Spectroscopy
- X-Ray Absorption and Photoelectron Spectroscopies Using Total Reflection X-Rays
- Tunnel Gap Imaging Investigation of Voltage Dependence of Molecular Images Obtained by Scanning Tunneling Microscope
- High-Performance Current-Voltage Measurement System for Scanning Tunneling Spectroscopy of Deposited Molecules
- Turnnel Gap Imaging Study of Highly Oriented Pyrolytic Graphite Using Scanning Tunneling Microscope
- Measurements of Plasma Parameters in a High-Frequency Glow Discharge Using the Orifice Probe
- Experimental and Theoretical Two-Dimensional X-Ray Photoelectron Diffraction Patterns from GaAs(001) Surface
- Direct Atomic Site Determination of Foreign Atoms in a Crystal Surface Layer by X-Ray Photoelectron Diffraction
- Estimation of Surface Crystal Regularity by Utilizing X-Ray Photoelectron Diffraction (XPED) Effects
- Quantitative XPS Measurement on the Surfaces of GaP, GaSb and ZnSe Single Crystals
- Quantitative X-Ray Photoelectron Spectroscopic (XPS) Measurement on the Surfaces of GaAs(111), (111) and (110) Single Crystals : Determination of Relative Photo-Auger Ionization Cross Sections and Electron Mean Free Paths by Using the Crystal Regularity o
- Angular Denendence of XPS Intensities from GaAs (110) Surface : PHOTOEMISSION (MAINLY UPS AND XPS)
- Barrier Height Imaging Investigation of Liquid Crystal Molecules Adsorbed on Graphite
- X-Ray Fluorescence Analysis of Hg in SiO_2 Films Deposited by Hg-Sensitized Photo-CVD
- Spectro-Diffractometry for Chemical-State Analysis Based on In-Advance Simulations
- In-Advance Simulation and Chemical State Analysis by Spectro-Diffractometry
- Photothermal Beam Deflection (PBD) Image of Certain GaAs Wafers
- Possibility of the Discrimination of Different Chemical States by Energy-Dispersive X-Ray Spectroscopy
- Total-Reflection X-Ray Fluorescence Analysis Using Monochromatic Beam
- Electron Spectroscopy Using a Gas-Flow Proportional Counter under Gaseous Environment and its Application to X-Ray absorption fine structure Measurements
- Chemical State Observation of Ni Adsorbad on Zeolite by the Conversion-Electron-Yield Method
- K-Shell Ionization of Beryllium by Proton and Heavy Ions
- A Simulation Study of Signal to Background Ratio of XANES by Total Electron Yield at Grazing Angle
- Laser Breakdown Acoustic Effect of Ultrafine Particle in Liquids and Its Application to Particle Counting : Mechanical and Acoustical Properties
- Preface
- Surface Sensitive X-ray Absorption Fine Structure Measurement Using Sample Current Induced by Totally Reflected X-rays.
- Vacuum Ultraviolet Absorption and Photoelectron Spectra of Aliphatic Ketones
- The Photoelectron Spectra of Alcohols, Mercaptans and Amines
- Characterization of solid surfaces by means of combined electron spectroscopy (XPS-SEM-microAES).:XPS-SEM-MicroAES
- Laser-induced photo-acoustic ultra trace determinations of liquid samples.
- Infrared Absorption Intensities of Out-of-plane CH Bending Vibrations of Substituted Benzenes. IV. Solvent Effect on the Intensities of the Bands of Aniline
- In situ Observation of Semiconductor-Dye Interface by Means of Photoacoustic Spectroscopy