Quantitative Analysis of Oxygen in Oxygen-Doped Polycrystalline Silicon Films with Ion Microanalyzer
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概要
- 論文の詳細を見る
Quantitative analysis of oxygen in polycrystalline silicon films doped with oxygen atoms was investigated with an ion microanalyzer. O+, SiO+ and Si2O+ ions were detected as secondary positive ions under 10 keV Ar+ ion bombardment. The detection sensitivities of SiO+ and Si2O+ ions were 10 times over that of O+ ions. The blank level of Si2O+ ions was smaller than that of SiO+ ions. A linear relation was obtained between the intensity ratio of Si2O+ to Si2+ and oxgen concentration determined by infrared spectroscopy.
- 日本質量分析学会の論文
著者
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Mochizuki Yasuhiro
Hitachi Research Labolatory Hitachi Ltd.
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OKAJIMA Yoshiaki
Hitachi Research laboratory, Hitachi Ltd.
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Okajima Yoshiaki
Hitachi Research Lab. Hitachi Lid.
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Mochizuki Yasuhiro
Hitachi Research Laboratory, Hitachi Ltd.
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