Solid-State Reaction between Manganese Thin Filmsand Silicon carbide

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概要

• 論文の詳細を見る

• The solid-state reaction between Mn thin films and SiC ceramic was investigated at annealing temperatures between 450 and 600℃ using Auger electron spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. Carbon was found to diffuse readily into the manganese layer after annealing for 1 min at 450℃, forming manganese carbide; and the silicon thus released interdiffuses with manganese above 550℃ to form manganese silicide. The activation energy for the formation of the manganese carbide was 15.5 kcal/mol.

• 社団法人応用物理学会の論文
• 1985-08-20

著者

• OKAJIMA Yoshiaki

  Hitachi Research laboratory, Hitachi Ltd.

• Okajima Y

  Tokai Univ. Kanagawa Jpn

• Okajima Yoshiaki

  Hitachi Research Lab. Hitachi Lid.

• MIYAZAKI Kunio

  Hitachi Research Laboratory, Hitachi Ltd.

• Miyazaki Kunio

  Hitachi Research Laboratory Hitachi Ltd.

関連論文

• TEM Observations of Initial Crystallization States for LPCVD Si Films : Condensed Matter
• Quantitative Analysis of Oxygen in Oxygen-Doped Polycrystalline Silicon Films with Ion Microanalyzer
• Solid-State Reaction between Manganese Thin Filmsand Silicon carbide
• Measurement of Sputtering Rate for 10 keV O^+_2 Ions with Ion Microanalyzer
• Quantitative Analysis of High Temperature Alloys with an Ion Microanalyzer
• Sputtering of Vacuum Deposited Metal Films by Oxygen Ion Bombardment
• Use of ion microanalyzer in the analysis of passive layers on stainless steel.

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