Sputtering of Vacuum Deposited Metal Films by Oxygen Ion Bombardment

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概要

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• The sputtering rates of chromium, copper, germanium and gold films, which were prepared by a vacuum deposition method, were measured after oxygen ion bombardment. was found that sputtering rates are proportional to the current density of primary oxygen ions. This relation can be used to determine the depth of a sputtered surface when beam parameters change, and allows to obtain the compositional depth profile of multi-layer metal films, prepared by vacuum deposition.

• 日本質量分析学会の論文

著者

• Okajima Yoshiaki

  Hitachi Research Lab. Hitachi Lid.

• Okajima Yoshiaki

  Hitachi Research Lab., Hitachi Ltd.,

• Aizawa Yukiyoshi

  Hitachi Research Lab ., Hitachi Ltd.,

関連論文

• TEM Observations of Initial Crystallization States for LPCVD Si Films : Condensed Matter
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• Measurement of Sputtering Rate for 10 keV O^+_2 Ions with Ion Microanalyzer
• Quantitative Analysis of High Temperature Alloys with an Ion Microanalyzer
• Sputtering of Vacuum Deposited Metal Films by Oxygen Ion Bombardment
• Use of ion microanalyzer in the analysis of passive layers on stainless steel.

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