Measurement of Sputtering Rate for 10 keV O^+_2 Ions with Ion Microanalyzer

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概要

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• The sputtering rates of single-crystal Si and polycrystalline Ag, Cu, Ni and Al were measured. The target materials were bombarded with oxygen ions accelerated at 10 kV. The sputtering rates of the target materials were a fifth of those obtained with an argon ion beam. The difference was larger than the difference between the masses of the oxygen and argon ions used for the incident beams. However, the sputtering rates with oxygen ions were related to the strenght of the bonds between the atams of the target material by the following expression, from analogy with an argon ion beam. S_r=4(I/D)(E_c/M_t)^<-1.4>, where S_r is the sputtering rate, I is the current density of the incident ions, and D, M_t and E_c are the atomic density, mass number and cohesive energy of the target material, respectively.

• 社団法人応用物理学会の論文
• 1981-12-05

著者

• Okajima Yoshiaki

  Hitachi Research Lab. Hitachi Lid.

関連論文

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• Quantitative Analysis of Oxygen in Oxygen-Doped Polycrystalline Silicon Films with Ion Microanalyzer
• Solid-State Reaction between Manganese Thin Filmsand Silicon carbide
• Measurement of Sputtering Rate for 10 keV O^+_2 Ions with Ion Microanalyzer
• Quantitative Analysis of High Temperature Alloys with an Ion Microanalyzer
• Sputtering of Vacuum Deposited Metal Films by Oxygen Ion Bombardment
• Use of ion microanalyzer in the analysis of passive layers on stainless steel.

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