First-Principles Calculations on Mg Impurity and Mg-H Complex in GaN
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-07-01
著者
-
OKAMOTO Yasuharu
Fundamental Research Laboratories, NEC Corporation
-
SAITO Mineo
NEC Informatic Systems, Ltd.
-
OSHIYAMA Atsushi
Institute of Physics, University of Tsukuba
-
Saito M
Tanaka Kikinzoku Kogyo Kk Kanagawa Jpn
-
Saito Mineo
Nec Informatec Systems
-
Okamoto Yasuharu
Fundamental Research Laboratories Nec Corporation
-
Oshiyama A
Graduate School Of Pure And Applied Physics University Of Tsukuba:center For Computational Science U
-
Oshiyama Atsushi
Institute Of Physics University Of Tsukuba
関連論文
- Electron Microscope Study of Decagonal Quasicrystals of Al_Ni_Fe_
- Optical Transmittance of Anodically Oxidized Aluminum Alloy
- Infrared Optical Constants of Anodic Alumina Films with Micropore Arrays
- Multivacancy and Its Hydrogen Decoration in Crystalline Si
- Space Group Determination of Decagonal Quasicrystals of an Al_Ni_Fe_ Alloy Using Convergent-Beam Electron Diffraction
- A Highly Selective Photoresist Ashing Process for Silicon Nitride Films by Addition of Trifluoromethane : Semiconductors
- Photoresist Ashing Process Using Carbon Tetrafluoride Gas Plasma with Ammonia Gas Addition
- Polarization Characteristics of Alumina Films Anodized at Low Temperature
- Influence of the Optical Purity on the Smectic Layer Thickness and the Transition Order in Enantiomeric Mixtures of an Antiferroelectric Liquid Crystal
- Magic Numbers of Multivacancy in Crystalline Si:Tight-Binding Studies for the Stability of the Multivacancy
- Electronic and Geometric Structures of Fullerenes and Metallofullerenes
- Fermi Surfaces of Alkali-Metal-Doped C_ Solid
- Effect of Microparticles on Acousto-Optic Diffraction in Water
- Raman-Nath Diffraction by Microparticles in Water
- First-Principles Calculations on Mg Impurity and Mg-H Complex in GaN
- Oxygen Concentration in the Top Silicon Layer of Silicon-on-Insulator Materials Formed by Low-Dose Implantation of Oxygen
- Effect of Fe Impurities on the Generation of Process-Induced Microdefects in Czochralski Silicon Crystals
- High Speed Recording Characteristics of 3-Beam Drive : Drive Technology
- High Speed Recording Characteristics of 3-Beam Drive
- First Order Paraelectric-Antiferroelectric Phase Transition in a Chiral Smectic Liquid Crystal of a Fluorine Containing Phenyl Pyrimidine Derivative
- Phase Diagram and Crystal Growth of NdBa_2Cu_3O_
- Phase-Equilibrium Diagram in the Ternary System Y_2O_3-BaO-CuO : Electrical Properties of Condensed Matter
- Pressure and Orientation Effects on the Electronic Structure of Carbon Nanotube Bundles
- First-Principles Study of Hydrogen Incorporation in Multivacancy in Silicon : Condensed Matter: Electronic Properties, etc.
- 1P182 Theoretical Investigation into Proton Transfer Mechanism Involving Peptide Bonds(5. Heme protein,Poster Session,Abstract,Meeting Program of EABS & BSJ 2006)
- S1f1-7 Theoretical approaches for protein function(S1-f1: "Structural chemical studies on physiological functions of proteins",Symposia,Abstract,Meeting Program of EABS & BSJ 2006)
- On the Reaction Scheme for Ti/TiN Chemical Vapor Deposition (CVD) Process Using TiCl_4
- 8p-S-8 Positron 2D-ACAR of Diamond, Si and Ge : First-Principles Calculation and Experiments
- First Principles Study of Atomic-Scale Al_2O_3 Films as Insulators for Magnetic Tunnel Junctions
- Targeting the Development of a Virtual Microscope
- Theoretical Study of the Surface Reaction Mechanism of GaN with HCl
- Nanometer-Scale Ferromagnet : Carbon Nanotubes with Finite Length
- Ferromagnetic Electronic Structures of Ga Wires on Si(001) Surfaces
- Hole-Injection-Induced Structural Transformation of Oxygen Vacancy in α-Quartz
- Electronic Structures of Polyglycine and Active Sites of Cytochrome c Oxidase(Cross-disciplinary Physics and Related Areas of Science and Technology)
- Atomic and Electronic Structures of Deformed Graphite Sheets
- Nanometer-Scale Ferromagnet : Carbon Nanotubes with Finite Length
- Band Structures of Wurtzite InN and Ga1-xInxN by All-Electron $GW$ Calculation
- Open Edge Growth Mechanisms of Single Wall Carbon Nanotubes
- Open Edge Growth Mechanisms of Single Wall Carbon Nanotubes