First Principles Study of Atomic-Scale Al_2O_3 Films as Insulators for Magnetic Tunnel Junctions
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概要
- 論文の詳細を見る
We performed density-functional calculations with Al/Al_2O_3/Al structures as models to study Al_2O_3 tunnel barriers for magnetic tunnel junctions. We found that aluminum oxide films thicker than 4.6Å have pseudogaps without substantial gap states, which suggests that these films have good insulating properties. This finding is consistent with an experimental result where a large magnetoresistance ratio was attained with a film thickness of about 8Å.
- 社団法人応用物理学会の論文
- 2000-05-15
著者
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Sugino O
Fundamental Research Laboratories Nec Corporation
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Sugino Osamu
Nec Fundamental Research Laboratories
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Sugino Osamu
Institute Of Applied Physics The University Of Tsukuba
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Sugino Osamu
Fundamental Research Laboratories Nec Corporation
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Saito Mineo
Nec Informatec Systems Ltd.
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Saito Mineo
Nec Informatec Systems
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Watari Noriko
Nec Informatec Systems Ltd.
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Ohnishi Shuhei
Nec Fundamental Research Laboratories
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Tsuge Hisanao
Nec Functional Materials Research Laboratories
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