Band Structures of Wurtzite InN and Ga1-xInxN by All-Electron $GW$ Calculation
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概要
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The experimentally reported bandgap of wurtzite-type InN dramatically decreased from 1.9 eV to 0.7–0.8 eV very recently. In this paper we report first-principles electronic band-structure calculations of InN by using the all-electron full-potential linearized augmented-plane-wave (FLAPW) method in both local-density approximation (LDA) and $GW$ approximation (GWA), and provide the reliable theoretical bandgap of InN. Our calculation suggests that InN is a narrow-gap semiconductor and strongly supports the recently reported smaller bandgaps. Moreover, we reproduce the bandgap change of Ga1-xInxN ternary alloys as a function of In content $x$. The present work supports the possibility of bandgap control in the entire range of visible light, using nitrides alone.
- 2004-03-15
著者
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Hamada Noriaki
Department Of Condensed Matter Physics The Institute Of Scientific And Industrial Research Osaka Uni
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Oshiyama Atsushi
Institute Of Physics University Of Tsukuba
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Usuda Manabu
Synchrotoron Radiation Research Center Japan Atomic Energy Research Institute
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Shiraishi Kenji
Institute Of Physics University Of Tsukuba
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Shiraishi Kenji
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
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