Interface-Roughness Scattering in GaAs/AlxGa1-xAs Superlattices

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概要

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• The electron mobility limited by the interface-roughness scattering in a GaAs/AlxGa1-xAs superlattice is studied as a function of the period (the well width $L_{\text{W}}$ and the barrier thickness $L_{\text{B}}$) and the temperature. If the superlattice period is short and the electronic states resemble that of the 3D state, the mobility is limited by the interface-roughness scattering at low temperatures and insensitive to the temperature, in good agreement with experimental results. Using a finite potential-barrier height, it is shown that the variation of the mobility as a function of the quantum well width $L_{\text{W}}$ is not so steep as that of the single-quantum-well structure assuming an infinite potential-barrier height.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-10-20

著者

• Kano Hiroyuki

  Toyota Central R & D Labs. Inc.

• Sawaki Nobuhiko

  Nagoya University Department Of Electronics

• Hashimoto Masafumi

  Toyota Central R & D Labs. Inc.

• Wataya Mitsuo

  Nagoya University, Department of Electronics, Chikusa-ku, Nagoya 464-01

• Goto Hideo

  Nagoya University, Department of Electronics, Chikusa-ku, Nagoya 464-01

• Akasaki Isamu

  Nagoya University, Department of Electronics, Chikusa-ku, Nagoya 464-01

関連論文

• Tunneling Transfer and Energy Relaxation Rate of Photo-Excited Carriers in Coupled Quantum Wells ( Quantum Dot Structures)
• Hot Electron and Real Space Transfer in Double-Quantum-Well Structures
• Interface-Roughness Scattering in GaAs/AlxGa1-xAs Superlattices

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