Tunneling Transfer and Energy Relaxation Rate of Photo-Excited Carriers in Coupled Quantum Wells (<Special Issue> Quantum Dot Structures)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-06-30
著者
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Murakami Tsutomu
Nagoya University Department Of Electronics
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Ikeda T
Toshiba Corp. Yokohama Jpn
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SAWAKI Nobuhiko
Nagoya University, Department of Electronics
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ANZAI Noritaka
Nagoya University, Department of Electronics
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YAMAGUCHI Masahito
Nagoya University, Department of Electronics
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IKEDA Takeshi
Nagoya University, Department of Electronics
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TAYA Masatoshi
Nagoya University, Department of Electronics
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Taya Masatoshi
Nagoya University Department Of Electronics
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Anzai Noritaka
Nagoya University Department Of Electronics
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Sawaki Nobuhiko
Nagoya University Department Of Electronics
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Yamaguchi Masahito
Nagoya University Department Of Electronics
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Ikeda Takeshi
Nagoya University Department Of Electronics
関連論文
- Novel Nanofabrication Process for InAs/AlGaSb Heterostructures Utilizing Atomic Force Microscope Oxidation
- Coulomb Blockade Observed in InAs/AlGaSb Nanostructures Produced by an Atomic Force Microscope Oxidation Process
- Atomic Force Microscope Nanofabrication of InAs/AlGaSb Heterostructures ( Quantum Dot Structures)
- Tunneling Transfer and Energy Relaxation Rate of Photo-Excited Carriers in Coupled Quantum Wells ( Quantum Dot Structures)
- Interface-Roughness Scattering in GaAs/AlxGa1-xAs Superlattices