カルコパイライト型化合物CuInSe2薄膜の合成とその高効率薄膜太陽電池開発の現状 (特集 21世紀に開花するニューマテリアルとそのテクノロジーへの招待--東京理科大学における先端材料研究)

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概要

• 論文の詳細を見る
• ティ-・アイ・シ-の論文

著者

• Endo S

  Osaka Univ. Osaka

• Endo S

  Research Center For Materials And Science At Extreme Conditions Osaka University

• Endo S

  Center For Interdisciplinary Research Tohoku University

• Endo S

  Osaka Univ. Toyonaka Jpn

• 遠藤 三郎

  Center For Interdisciplinary Research Tohoku University

関連論文

• Martensitic Transformation in Shape Memory Alloys under Magnetic Field and Hydrostatic Pressure
• Effects of Static Magnetic Field and Hydrostatic Pressure on the Isothermal Martensitic Transformation in an Fe-Ni-Cr Alloy
• Negative Temperature Coefficient of Electrical Resistivity in B2-Type Ti-Ni Alloys
• 4a-PS-12 CuInSe_2のX線光音響分光
• 14p-W-11 CdIn_Cr_S_4 の熱伝導 II
• 5a-M-10 CdIn_2S_4の電気的性質(II)
• カルコパイライト型化合物CuInSe2薄膜の合成とその高効率薄膜太陽電池開発の現状 (特集 21世紀に開花するニューマテリアルとそのテクノロジーへの招待--東京理科大学における先端材料研究)
• 5a-D-6 CuInSe_2のラマン散乱
• 2a-A-13 化合物半導体CdInGaS_4の光吸収温度変化と圧力変化
• 27p-B-4 CdIn_2S_4-In_2S_3系の光物性-I
• 30a-N-6 CdIn_zS_4の磁気抵抗効果(II)
• 4a-H-10 CdIn_Cr_S_4の磁気的および電気的性質(I)
• Effect of Magnetic Field and Hydrostatic Pressure on Martensitic Transformation and Its Kinetics
• 大電流放電プラズマ源のためのTiO_2セラミック基板とその特性
• Metallization of Mo-Cluster Compound Ga_Mo_2S_4 at 38 CPa
• Superconducting Behavior of YBa_2Cu_3O_7 under Pressure
• X-ray Absorption Near Edge Structure (XANES) of CuInSe_2, Brass and Phosphor Bronze by Photoacoustic Method : Photoacoustic Spectroscopy
• 1-3-42族カルコパイライト混晶半導体における材料設計法
• 3元カルコパイライト型半導体の物性と応用
• 2a-K-15 層状化合物半導体CdInGaS_4のフォトルミネッセンス
• 27p-B-5 CdIn_2S_4-In_2S_3系の光物性 (II)
• 12a-R-4 CdIn_2S_4のXPSスペクトル
• 10p-R-11 n型CuInSe_2における不純物伝導
• 12p-F-13 Hexagonal NiSの電気的性質 (II)
• Enhancement of the ^1H NMR Relaxation Rate at Low Temperatures and Development of Antiferromagnetic Spin Fluctuations of π-Electrons in Superconducting λ-(BETS)_2GaCl_4(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Enhancement of the ^1H NMR Relaxation Rate at Low Temperatures and Development of Antiferromagnetic Spin Fluctuations of π-Electrons in Superconducting λ-(BETS)_2GaCl_4
• ^Se NMR Evidence for the Development of Antiferromagnetic Spin Fluctuations of π-Electrons in λ-(BETS)_2GaCl_4
• ^Se NMR Evidence for the Development of Antiferromagnetic Spin Fluctuations of π-Electrons in λ-(BETS)_2GaCl_4
• Antiferromagnetic Ordering in the Conducting π-d System κ-(BEDT-TSF)_2FeCl_4 (where BEDT-TSF is Bis (ethylenedithio) tetraselenafulvalene, C_S_4Se_4H_8) : Condensed Matter: Electronic Properties, etc.
• X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
• Valence Band Structure of Si-As-Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space
• Pressure Effects on Electrical and Optical Properties of Si-As-Te Chalcogenide Glasses Fabricated in the Gravity Environment and in a Microgravity Environment
• Anomalous Splitting of ^1H-NMR Spectra in λ-(BEDT-TSF)_2FeCl_4
• 31p-LD-11 ZnCr_2Se_4の電気伝導
• Anomalous Dielectric Response in the πp-d Correlated Metallic State of λ-(BEDT-TSF)_2FeCl_4
• Acoustic de Hass-van Alphen Effect in Organic Superconductor α-(BEDT-TTF)_2NH_4Hg(SCN)_4
• Magnetic Quantum Oscillations in In_Ga_As/In_Al_As Multiquantum Well Observed by Millimeter Wave Responce
• Transport Properties in InP/InAlAs Type II Single Heterostructure
• 27a-B-12 CdInGaS_4のC(0001)面からの光電子スペクトル
• High-Pressure Effects in Si-As-Te Amorphous Chalcogenide Glasses Fabricated under Microgravity Environment
• 24pPSA-52 New magnetic poroperties of MnRhAs_xP_system
• Electrical and Optical Properties of CuInSe_2 Single Crystals Prepared by Three-Temperature-Horizontal Bridgman Method
• Electrical, Optical and Schottky Properties of AgGa(S_Se_x)_2 System
• Crystal Growth of CuInSe_2 by the Method of Horizontal Bridgman with Three Temperature Zones
• Structural and Optical Properties of the Cu_Ag_xGaS_2 System
• Effects of Oxygen Doping on Bulk Properties of CuInSe_2 Crystals
• Thermodynamical Properties of I-III-Vl_2-Group Chalcopyrite Semiconductors
• Study on the Crystal Structure of CdInGaS_4 and Cd_3InGaS_6 by Computer Simulation Method
• Electrical and Optical Properties of the CuGa(S_Se_x)_2 System
• Photoluminescence and Photoconduction in the System (CdIn_2S_4)_-(In_2S_3)_x
• Green Emission in CdS Films Deposited on CdInGaS_4 by Evaporation Method
• Optical Properties of Zn_xCd_InGaS_4 System
• Photothermal Effect in Compound Semiconductors CdInGaS_4 and CdIn_2S_4
• Electrical and Optical Properties of CuInSe_2 Single Crystals with Various Deviations from Stoichiometry
• Hydrostatic Pressure Dependence of the Fundamental Absorption Edges of CdInGaS_4 and ZnIn_2S_4
• Study on the Crystallographic and Photoluminescent Properties of Cd_3InGaS_6. : II. Photoluminescence
• Study on the Crystallographic and Photoluminescent Properties of Cd_3InGaS_6. I. Crystallographic Study
• Green Emission in CdS/CdInGaS_4
• Optical Properties of Cd_3InGaS_6
• On Green Emission in CdInGaS_4
• Fundamental Optical Absorption in Crystals of the CdIn_2S_4-In_2S_3 System : CHALCOGENIDE SPINELS : OPTICAL, ELECTRICAL AND MAGNETIC PROPERTIES
• Optical Absorption in CdIn_2S_4
• Effect of Excess Sulphur on the Electrical and Optical Properties of CdIn_2S_4
• On the Electrical and Thermal Properties of the Ternary Chalcogenides A_2^IB^X_3, A^IB^VX_2 and A_3^IB^VX_4 (A^I=Cu; B^=Ge, Sn; B^V=Sb; X=S, Se, Te) : II. Electrical and Thermal Properties of Cu_3SbSe_4
• 3p-TC-9 CdIn_2S_4の磁気抵抗効果(1)
• 10a-Q-1 Cu_2SnX_3,Cu_2GeX_3(X=S,Se)の熱伝導率
• 5a-M-11 CdIn_2S_4の磁気抵抗効果(III)
• TSEE from Aluminas and Spinels Subjected to Ar^+-Ion Irradiation : Exoemission Associated with Radiation Dosimetry
• Thermally Stimulated Exoelectron Emission of Plasma-Sprayed Zirconia Coatings : Exoemission Associated with Surfaces and Films
• Microstructure of Plasma-Sprayed Yttria-Stabilized Zirconia(Materials, Metallurgy & Weldability)
• ESR Studies on Cd^+ Centers in Alkali-silicate Slag
• 5a-M-12 CdIn_Cr_S_4の熱伝導
• 12p-K-12 Cu_3SbSe_4の半導体的性質II
• On the Electrical and Thermal Properties of Ternary Chalcogenides A^I_2B^X_3, A^IB^VX_2 and A^I_3B^VX_4 (A^I=Cu; B^=Ge, Sn; B^V=Sb; X=S, Se, Te) : III. Electrical Properties of Cu_2GeSe_3
• Anisotropy of the Conduction Band in CdIn_2S_4
• 第5回三元及び多元化合物国際会議
• 9p-B-13 Hexagonal NiSの熱的及び電気的性質

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