Adsorption and Dissociation Mechanism of Excited N_2 on ZnSe Surface

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概要

• 論文の詳細を見る

• Nitrogen molecular adsorption and dissociation on the ZnSe (100) surface has been examined by ab initio molecular orbital theory. Based on the electronic structure and energetics, the excited (^3Σ_u^+) nitrogen molecule can be selectively adsorbed and dissociated on a Zn atom of the ZnSe surface. This result supports the contention recently presented that the p-type ZnSe layers grown by plasma discharge, which successfully realized blue-green lasers, is grown by the excited (^3Σ_u^+) nitrogen molecular beam.

• 社団法人応用物理学会の論文
• 1993-01-30

著者

• UENOYAMA Takeshi

  Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.

• Nakao Takashi

  Av-it Development Group. Sony Corporation

• Nakao T

  Av-it Development Group. Sony Corporation

• UENOYAMA Takeshi

  Institute of Laser Engineering,Osaka University

• NAKAO Taketoshi

  Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.,

• Uenoyama T

  Matsushita Electric Industrial Co. Ltd. Kyoto Jpn

• Uenoyama Takeshi

  Central Research Laboratories Matsushita Electric Industrial Co. Ltd.

• Nakao Taketoshi

  Central Reseach Laboratory Matsushita Electric Industrial Co. Ltd.

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• Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers
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• Strain Effect on 630 nm GaInP/AlGaInP Multi-Quantum Well Lasers
• Nonlinear Effects in Collective Absorption
• Effect of Crystal Symmetry on Electronic Structures of CuInSe_2 and Related Compounds
• Adsorption and Dissociation Mechanism of Excited N_2 on ZnSe Surface
• Self-Sustained Pulsation in 650nm-Band AlGaInP Visible Laser Diodes with Highly Doped Saturable Absorbing Layer
• Ab Initio Calculations of Entropy and Heat Capacity of 1,1,1,2-Tetrafluoroethan(HFC-134a)
• Theoretical Study of Momentum Matrix Elements of GaN
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• Optical Gain Using Three-band Model Taking into Account the Excitonic Effects

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