Hayashi Kiyoshi | Renesas
スポンサーリンク
概要
関連著者
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Hayashi Kiyoshi
Renesas
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Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
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MATSUKI Takeo
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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Kasai Naoki
Device Platforms Laboratories Nec Corporation
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Akasaka Yasushi
Semiconductor Leading Edge Technologies Inc. (selete)
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TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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NARA Yasuo
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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TORII Kazuyoshi
Hitachi, Ltd., Central Research Laboratory
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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MAEDA Takeshi
Semiconductor Leading Edge Technologies, Inc.
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Arikado Tsunetoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Torii Kazuyoshi
Hitachi Ltd. Central Research Laboratory
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Oda Hidekazu
Renesas Technology Corporation Wafer Process Engineering Development Department
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HAYASHI Kiyoshi
Semiconductor Leading Edge Technologies, Inc.
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KASAI Naoki
Semiconductor Leading Edge Technologies, Inc.
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Kasai Naoki
Nec
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SHIGA Katsuya
Renesas Technology Corp.
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Shiga Katsuya
Renesas Technology Corporation Wafer Process Engineering Development Department
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Ohji Yuzuru
Process Technology Development Division Renesas Technology Corp.
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Hayashi Takashi
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Yamashita Tomohiro
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Eimori Takahisa
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Inuishi Masahide
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Ohji Yuzuru
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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NISHIMURA Isamu
Rohm
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AKASAKA Yasushi
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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NOGUCHI Masataka
NEC
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YAMASHITA Koji
Sanyo
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Akasaka Yasushi
Research Department 1 Semiconductor Leading Edge Technologies Inc.
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Eimori Takahisa
Renesas Technology Corporation Wafer Process Engineering Development Department
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Ohji Yuzuru
Renesas Technology Corporation Wafer Process Engineering Development Department
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Maeda Takeshi
Semiconductor Leading Edge Technologies Inc.
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Inuishi Masahide
Renesas Technology Corporation Wafer Process Engineering Development Department
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Matsuki Takeo
Research Department 1 Semiconductor Leading Edge Technologies Inc.
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Hayashi Kiyoshi
Renesas Technology Corporation Wafer Process Engineering Development Department
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Yamashita Tomohiro
Renesas Technology Corporation Wafer Process Engineering Development Department
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Hayashi Takashi
Renesas Technology Corporation Wafer Process Engineering Development Department
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Oda Hidekazu
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Yamashita Tomohiro
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
著作論文
- Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs(Microelectronic Test Structures)
- Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond
- Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain