Ohji Yuzuru | Process Technology Development Division Renesas Technology Corp.
スポンサーリンク
概要
関連著者
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Ohji Yuzuru
Process Technology Development Division Renesas Technology Corp.
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Oda Hidekazu
Renesas Technology Corporation Wafer Process Engineering Development Department
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ISHIBASHI Masato
Process Technology Development Division, Renesas Technology Corp.
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HORITA Katsuyuki
Process Technology Development Division, Renesas Technology Corp.
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KITAZAWA Masashi
Process Technology Development Division, Renesas Technology Corp.
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IGARASHI Motoshige
Process Technology Development Division, Renesas Technology Corp.
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KUROI Takashi
Process Technology Development Division, Renesas Technology Corp.
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EIMORI Takahisa
Process Technology Development Division, Renesas Technology Corp.
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INUISHI Masahide
Process Technology Development Division, Renesas Technology Corp.
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Hayashi Kiyoshi
Renesas
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SHIGA Katsuya
Renesas Technology Corp.
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Sawada Mahito
Process Development Department Process Technology Development Division Production And Technology Uni
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Shiga Katsuya
Renesas Technology Corporation Wafer Process Engineering Development Department
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Hayashi Takashi
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Yamashita Tomohiro
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Eimori Takahisa
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Inuishi Masahide
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Ohji Yuzuru
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Eimori Takahisa
Renesas Technology Corporation Wafer Process Engineering Development Department
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Ohji Yuzuru
Renesas Technology Corporation Wafer Process Engineering Development Department
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Inuishi Masahide
Renesas Technology Corporation Wafer Process Engineering Development Department
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Kobayashi Kiyoteru
Process Development Dept. Process Technology Development Div. Production And Technology Unit Renesas
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Hayashi Kiyoshi
Renesas Technology Corporation Wafer Process Engineering Development Department
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Yamashita Tomohiro
Renesas Technology Corporation Wafer Process Engineering Development Department
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Hayashi Takashi
Renesas Technology Corporation Wafer Process Engineering Development Department
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Oda Hidekazu
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Eimori Takahisa
Process Technology Development Division, Renesas Technology Corp. 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Ohji Yuzuru
Process Technology Development Division, Renesas Technology Corp. 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Yamashita Tomohiro
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Kitazawa Masashi
Process Technology Development Division, Renesas Technology Corp. 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Kuroi Takashi
Process Technology Development Division, Renesas Technology Corp. 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Horita Katsuyuki
Process Technology Development Division, Renesas Technology Corp. 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Sawada Mahito
Process Technology Development Division, Renesas Technology Corp. 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Inuishi Masahide
Process Technology Development Division, Renesas Technology Corp. 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Kobayashi Kiyoteru
Process Technology Development Division, Renesas Technology Corp. 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Kobayashi Kiyoteru
Process Development Department, Process Technology Development Division, Production and Technology Unit, Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Ishibashi Masato
Process Technology Development Division, Renesas Technology Corp. 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Igarashi Motoshige
Process Technology Development Division, Renesas Technology Corp. 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
著作論文
- Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond
- Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond