Yamashita Tomohiro | Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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概要
- Yamashita Tomohiroの詳細を見る
- 同名の論文著者
- Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japanの論文著者
関連著者
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Yamashita Tomohiro
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Oda Hidekazu
Renesas Technology Corporation Wafer Process Engineering Development Department
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MIURA Noriko
Renesas Technology Corp.
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Hayashi Kiyoshi
Renesas
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SHIGA Katsuya
Renesas Technology Corp.
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Shiga Katsuya
Renesas Technology Corporation Wafer Process Engineering Development Department
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Ohji Yuzuru
Process Technology Development Division Renesas Technology Corp.
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Hayashi Takashi
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Yamashita Tomohiro
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Eimori Takahisa
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Inuishi Masahide
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Ohji Yuzuru
Renesas Technology Corperation, Wafer Process Engineering Development Department, 4-1 Mizuhara, Itam
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Eimori Takahisa
Renesas Technology Corporation Wafer Process Engineering Development Department
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Ohji Yuzuru
Renesas Technology Corporation Wafer Process Engineering Development Department
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Inuishi Masahide
Renesas Technology Corporation Wafer Process Engineering Development Department
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Hayashi Kiyoshi
Renesas Technology Corporation Wafer Process Engineering Development Department
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Yamashita Tomohiro
Renesas Technology Corporation Wafer Process Engineering Development Department
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Hayashi Takashi
Renesas Technology Corporation Wafer Process Engineering Development Department
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Asai Koyu
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Asai Koyu
Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
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Yamaguchi Tadashi
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Fujisawa Masahiko
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Maekawa Kazuyoshi
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Maekawa Kazuyoshi
Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
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Oda Hidekazu
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Eikyu Katsumi
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Kawasaki Yoji
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Mizuo Mariko
Renesas Semiconductor Engineering Corporation, Itami, Hyogo 664-0005, Japan
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Tsuchimoto Jun-ichi
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Miura Noriko
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Yamaguchi Tadashi
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Yamaguchi Tadashi
Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
著作論文
- Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond
- Analytical Approach for Enhancement of n-Channel Metal--Oxide--Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing