MIURA Noriko | Renesas Technology Corp.
スポンサーリンク
概要
関連著者
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MIURA Noriko
Renesas Technology Corp.
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NOGUCHI Junji
Hitachi, Ltd., Micro Device Division
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KUBO Maki
Hitachi, Ltd., Micro Device Division
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TAKEDA Ken-ichi
Hitachi, Ltd., Central Research Laboratory
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Kubo Maki
Device Development Center Hitachi Ltd.
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TSUNEDA Ruriko
Hitachi, Ltd., Central Research Laboratory
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MAKABE Kazuya
Renesas Technology Corp.
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Asai Koyu
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Asai Koyu
Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
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Yamaguchi Tadashi
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
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Fujisawa Masahiko
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Maekawa Kazuyoshi
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Maekawa Kazuyoshi
Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
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Eikyu Katsumi
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Yamashita Tomohiro
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Kawasaki Yoji
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Mizuo Mariko
Renesas Semiconductor Engineering Corporation, Itami, Hyogo 664-0005, Japan
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Tsuchimoto Jun-ichi
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Miura Noriko
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Yamaguchi Tadashi
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Yamaguchi Tadashi
Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
著作論文
- Influence of Cu-Ion Migration and Fine-Line Effect on Time-Dependent Dielectric Breakdown Lifetime of Cu Interconnects
- Analytical Approach for Enhancement of n-Channel Metal--Oxide--Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing