Influence of Cu-Ion Migration and Fine-Line Effect on Time-Dependent Dielectric Breakdown Lifetime of Cu Interconnects

スポンサーリンク

概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-01-15

著者

• NOGUCHI Junji

  Hitachi, Ltd., Micro Device Division

• KUBO Maki

  Hitachi, Ltd., Micro Device Division

• TAKEDA Ken-ichi

  Hitachi, Ltd., Central Research Laboratory

• Kubo Maki

  Device Development Center Hitachi Ltd.

• TSUNEDA Ruriko

  Hitachi, Ltd., Central Research Laboratory

• MIURA Noriko

  Renesas Technology Corp.

• MAKABE Kazuya

  Renesas Technology Corp.

関連論文

• Dependence of Time-Dependent Dielectric Breakdown Lifetime on the Structure in Cu Metallization
• Influence of Cu-Ion Migration and Fine-Line Effect on Time-Dependent Dielectric Breakdown Lifetime of Cu Interconnects
• Impact of Self-Aligned Metal Capping Method on Submicron Copper Interconnections
• Analytical Approach for Enhancement of n-Channel Metal--Oxide--Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing
• Impact of Self-Aligned Metal Capping Method on Submicron Copper Interconnections
• Dependence of Time-Dependent Dielectric Breakdown Lifetime on the Structure in Cu Metallization
• Influence of Cu-Ion Migration and Fine-Line Effect on Time-Dependent Dielectric Breakdown Lifetime of Cu Interconnects

スポンサーリンク