Eikyu Katsumi | Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

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概要

関連著者

MIURA Noriko
Renesas Technology Corp.
Asai Koyu
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
Asai Koyu
Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
Yamaguchi Tadashi
Renesas Technology Corp., 4-1 Mizuhara, Itami, Hyogo 664-0005, Japan
Fujisawa Masahiko
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
Maekawa Kazuyoshi
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
Maekawa Kazuyoshi
Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
Eikyu Katsumi
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
Yamashita Tomohiro
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
Kawasaki Yoji
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
Mizuo Mariko
Renesas Semiconductor Engineering Corporation, Itami, Hyogo 664-0005, Japan
Tsuchimoto Jun-ichi
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
Miura Noriko
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
Yamaguchi Tadashi
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
Yamaguchi Tadashi
Renesas Electronics Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

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著作論文

Analytical Approach for Enhancement of n-Channel Metal--Oxide--Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing

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