NARA Yasuo | Research Department 1, Semiconductor Leading Edge Technologies, Inc.
スポンサーリンク
概要
関連著者
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NARA Yasuo
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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Matsuki Takeo
Research Department 1 Semiconductor Leading Edge Technologies Inc.
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Eimori Takahisa
Research Department 1 Semiconductor Leading Edge Technologies Inc.
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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Kamiyama Satoshi
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
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Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
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MATSUKI Takeo
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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INUMIYA Seiji
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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Aoyama Takayuki
Research And Development Division Pharmaceuticals Group Nippon Kayaku Co. Ltd.
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Akasaka Yasushi
Research Department 1 Semiconductor Leading Edge Technologies Inc.
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Mise Nobuyuki
Research Department 1 Semiconductor Leading Edge Technologies Inc.
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Ishikawa Dai
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
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Inumiya Seiji
Semiconductor Leading Edge Technologies Inc. (selete)
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MISE Nobuyuki
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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TORII Kazuyoshi
Hitachi, Ltd., Central Research Laboratory
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AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
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Torii Kazuyoshi
Hitachi Ltd. Central Research Laboratory
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Sano Atsushi
Research Dept. 2 Semiconductor Equipment System Lab.
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Sano Atsushi
Research And Development Division Kikkoman Corporation
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Aoyama Takayuki
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
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Kasai Naoki
Device Platforms Laboratories Nec Corporation
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Kasai Naoki
Nec
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TORII Kazuyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE)
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Hayashi Kiyoshi
Renesas
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Akasaka Yasushi
Semiconductor Leading Edge Technologies Inc. (selete)
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Horii Sadayoshi
Research Dept. 2 Semiconductor Equipment System Lab.
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NISHIMURA Isamu
Rohm
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AKASAKA Yasushi
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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NOGUCHI Masataka
NEC
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YAMASHITA Koji
Sanyo
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ISHIKAWA Dai
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.
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Inumiya Seiji
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Eimori Takahisa
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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YAMASHITA KOJI
Research and Technology Development Division, HSP company
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Yamashita Koji
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kurosawa Etsuo
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Akasaka Yasushi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Nishimura Isamu
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Hayashi Kiyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Noguchi Masataka
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kasai Naoki
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Mise Nobuyuki
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ishikawa Dai
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Aoyama Takayuki
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Matsuki Takeo
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kamiyama Satoshi
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation
- Production-Worthy HfSiON Gate Dielectric Fabrication Enabling EOT Scalability Down to 0.86nm and Excellent Reliability by Polyatomic Layer Chemical Vapor Deposition Technique
- Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain
- Extended Scalability of HfON/SiON Gate Stack Down to 0.57 nm Equivalent Oxide Thickness with High Carrier Mobility by Post-Deposition Annealing
- Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors
- Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-$k$ Gate Metal–Insulator–Semiconductor Field-Effect Transistors with NiSi Source/Drain