Nishimura Isamu | Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

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概要

関連著者

NARA Yasuo
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
TORII Kazuyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc. (SELETE)
Akasaka Yasushi
Research Department 1 Semiconductor Leading Edge Technologies Inc.
Matsuki Takeo
Research Department 1 Semiconductor Leading Edge Technologies Inc.
YAMASHITA KOJI
Research and Technology Development Division, HSP company
Yamashita Koji
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Akasaka Yasushi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Nishimura Isamu
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Hayashi Kiyoshi
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Noguchi Masataka
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Kasai Naoki
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Matsuki Takeo
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

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著作論文

Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-$k$ Gate Metal–Insulator–Semiconductor Field-Effect Transistors with NiSi Source/Drain

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