Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors
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概要
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The interfacial reaction of a TiN/HfSiON/SiO2 gate stack in high-temperature annealing was investigated from the viewpoint of the redistribution of the elements of gate stack materials. Oxygen incorporation enhanced the redistribution of the elements not only of the dielectric film of HfSiON/SiO2 but also of the gate electrode film of TiN. Oxygen incorporation in high-temperature annealing enhances the partial release of Hf, N, and Si from HfSiON or the disassembly of the HfSiON film, which leads to an increase in the equivalent-oxide thickness (EOT). The EOT increase can be determined by the combination of the decrease in the HfSiON film caused by the Hf and N release from HfSiON and the increase in the interfacial layer created by the oxidation of the Si substrate surface by the penetrating oxygen. It is also found that Ti diffused from the TiN into the interfacial layer through the HfSiON/SiO2. The suppression of oxygen incorporation is a key technique in the high-temperature annealing of metal/high-$k$ gate stacks.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Eimori Takahisa
Research Department 1 Semiconductor Leading Edge Technologies Inc.
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INUMIYA Seiji
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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NARA Yasuo
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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Mise Nobuyuki
Research Department 1 Semiconductor Leading Edge Technologies Inc.
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Matsuki Takeo
Research Department 1 Semiconductor Leading Edge Technologies Inc.
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Inumiya Seiji
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Eimori Takahisa
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Mise Nobuyuki
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
関連論文
- Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation
- Production-Worthy HfSiON Gate Dielectric Fabrication Enabling EOT Scalability Down to 0.86nm and Excellent Reliability by Polyatomic Layer Chemical Vapor Deposition Technique
- Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain
- Extended Scalability of HfON/SiON Gate Stack Down to 0.57 nm Equivalent Oxide Thickness with High Carrier Mobility by Post-Deposition Annealing
- Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors
- Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-$k$ Gate Metal–Insulator–Semiconductor Field-Effect Transistors with NiSi Source/Drain