Mise Nobuyuki | Research Department 1 Semiconductor Leading Edge Technologies Inc.
スポンサーリンク
概要
関連著者
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Eimori Takahisa
Research Department 1 Semiconductor Leading Edge Technologies Inc.
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INUMIYA Seiji
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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NARA Yasuo
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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Mise Nobuyuki
Research Department 1 Semiconductor Leading Edge Technologies Inc.
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Matsuki Takeo
Research Department 1 Semiconductor Leading Edge Technologies Inc.
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Inumiya Seiji
Semiconductor Leading Edge Technologies Inc. (selete)
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
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MATSUKI Takeo
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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MISE Nobuyuki
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Inumiya Seiji
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Eimori Takahisa
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Mise Nobuyuki
Research Department 1, Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation
- Interfacial Reaction of TiN/HfSiON Gate Stack in High-Temperature Annealing for Gate-First Metal–Oxide–Semiconductor Field-Effect Transistors