Ishikawa Dai | Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
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概要
- ISHIKAWA Daiの詳細を見る
- 同名の論文著者
- Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.の論文著者
関連著者
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Kamiyama Satoshi
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
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NARA Yasuo
Research Department 1, Semiconductor Leading Edge Technologies, Inc.
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Aoyama Takayuki
Research And Development Division Pharmaceuticals Group Nippon Kayaku Co. Ltd.
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Ishikawa Dai
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
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Sano Atsushi
Research Dept. 2 Semiconductor Equipment System Lab.
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Sano Atsushi
Research And Development Division Kikkoman Corporation
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Aoyama Takayuki
Research Dept. 1 Semiconductor Leading Edge Technologies (selete) Inc.
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Horii Sadayoshi
Research Dept. 2 Semiconductor Equipment System Lab.
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ISHIKAWA Dai
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc.
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Kurosawa Etsuo
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ishikawa Dai
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Aoyama Takayuki
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Kamiyama Satoshi
Research Dept. 1, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Production-Worthy HfSiON Gate Dielectric Fabrication Enabling EOT Scalability Down to 0.86nm and Excellent Reliability by Polyatomic Layer Chemical Vapor Deposition Technique
- Extended Scalability of HfON/SiON Gate Stack Down to 0.57 nm Equivalent Oxide Thickness with High Carrier Mobility by Post-Deposition Annealing