SHIRAISHI Kenji | Nanomaterials Lab., National Institute for Materials Science
スポンサーリンク
概要
関連著者
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Ohdaira Toshiyuki
National Inst. Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Suzuki Ryoichi
National Institute Of Advanced Industrial Science And Technology
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ARIKADO Tsunetoshi
Semiconductor Leading Edge Technologies Inc.
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies, Inc.
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HIGUCHI Keiichi
Institute of Applied Physics, University of Tsukuba
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SHIRAISHI Kenji
Nanomaterials Lab., National Institute for Materials Science
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YAMADA Keisaku
Nanomaterials Lab., National Institute for Materials Science
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UEDONO Akira
Institute of Materials Science, University of Tsukuba
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology
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Uedono A
Univ. Tsukuba Tsukuba Jpn
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TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
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YAMABE Kikuo
Institute of Applied Physics, University of Tsukuba
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HORIUCHI Atsushi
Semiconductor Leading Edge Technologies, Inc.
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KITAJIMA Hiroshi
Semiconductor Leading Edge Technologies, Inc.
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Ohdaira Toshiyuki
National Institute Of Advanced Industrial Science And Technology (aist)
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Yamamoto K
Kaneka Corporation
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Arikado Tsunetoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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GOTO Masakazu
Institute of Applied Physics, University of Tsukuba
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Goto Masakazu
Institute Of Applied Physics University Of Tsukuba
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Horiuchi Atsushi
Semiconductor Leading Edge Technologies Inc.
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies Inc.
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Yamada Keisaku
Nanomaterials Lab., National Institute for Materials Science, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan
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Higuchi Keiichi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Mitsuhashi Riichiro
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Ohdaira Toshiyuki
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Horiuchi Atsushi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan
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HORIUCHI Atsushi
Semiconductor Leading Edge Technologies
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Kitajima Hiroshi
Semiconductor Leading Edge Technologies
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MITSUHASHI Riichiro
Semiconductor Leading Edge Technologies
著作論文
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams