Topography Change Due to Multilayer Oxidation at Sio_2/Si(111) Interfaces

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-30

著者

• Tokuda Norio

  Institute Of Applied Physics University Of Tsukuba

• HOJO Daisuke

  Institute of Applied Physics, University of Tsukuba

• YAMABE Kikuo

  Institute of Applied Physics, University of Tsukuba

• OEDA Hitoshi

  Institute of Applied Physics, University of Tsukuba

関連論文

• Atomic Topography Change of SiO_2/Si Interfaces during Thermal Oxidation : Semiconductors
• SiO_2 Surface and SiO_2/Si Interface Topography Change by Thermal Oxidation : Semiconductors
• Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface
• Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates
• Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
• Nonuniformity in Ultrathin SiO_2 on Si(111) Characterized by Conductive Atomic Force Microscopy
• Selective Growth of Cu Nanowires on Si(111) Substrates
• Effect of SiO_2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
• Topography Change Due to Multilayer Oxidation at Sio_2/Si(111) Interfaces
• Leakage Current Distribution of Cu-Contaminated Thin SiO_2
• Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
• Epitaxial Growth of BaTiO_3 Thin Film on SrTiO_3 Substrate in Ultra High Vacuum without Introducing Oxidant : Surfaces, Interfaces, and Films
• Flattening Phenomenon Observed during Epitaxial Growth of BaTiO_3 by Alternating Deposition Method
• Electron Emission from a Diamond (111) p-i-n^+ Junction Diode with Negative Electron Affinity during Room Temperature Operation
• Surface Microroughness Observed during Wet Etching of Silicon Dioxide with High Electric Field Stress
• Time-Dependent Leakage Current of BaSrTiO_3 Film under High Temperature Bias Stress
• Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
• Topography Change Due to Multilayer Oxidation at SiO2/Si(111) Interfaces
• Effect of SiO2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
• Leakage Current Distribution of Cu-Contaminated Thin SiO2
• Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water

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