Effect of SiO_2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-05-15
著者
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Tokuda Norio
Institute Of Applied Physics University Of Tsukuba
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HOJO Daisuke
Institute of Applied Physics, University of Tsukuba
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YAMABE Kikuo
Institute of Applied Physics, University of Tsukuba
関連論文
- Atomic Topography Change of SiO_2/Si Interfaces during Thermal Oxidation : Semiconductors
- SiO_2 Surface and SiO_2/Si Interface Topography Change by Thermal Oxidation : Semiconductors
- Nanometer Scale Height Standard Using Atomically Controlled Diamond Surface
- Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
- Nonuniformity in Ultrathin SiO_2 on Si(111) Characterized by Conductive Atomic Force Microscopy
- Selective Growth of Cu Nanowires on Si(111) Substrates
- Effect of SiO_2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
- Topography Change Due to Multilayer Oxidation at Sio_2/Si(111) Interfaces
- Leakage Current Distribution of Cu-Contaminated Thin SiO_2
- Characterization of Hf_Al_O_x Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Epitaxial Growth of BaTiO_3 Thin Film on SrTiO_3 Substrate in Ultra High Vacuum without Introducing Oxidant : Surfaces, Interfaces, and Films
- Flattening Phenomenon Observed during Epitaxial Growth of BaTiO_3 by Alternating Deposition Method
- Electron Emission from a Diamond (111) p-i-n^+ Junction Diode with Negative Electron Affinity during Room Temperature Operation
- Surface Microroughness Observed during Wet Etching of Silicon Dioxide with High Electric Field Stress
- Time-Dependent Leakage Current of BaSrTiO_3 Film under High Temperature Bias Stress
- Homoepitaxial Growth of SrTiO_3 in an Ultrahigh Vacuum with Automatic Feeding of Oxygen from the Substrate at Temperatures as Low as 370℃ : Surfaces, Interfaces, and Films
- Topography Change Due to Multilayer Oxidation at SiO2/Si(111) Interfaces
- Effect of SiO2 Fence on Atomic Step Flow in Chemical Etching of Si Surface
- Leakage Current Distribution of Cu-Contaminated Thin SiO2
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water